TY - JOUR UR - http://lib.ugent.be/catalog/pug01:4426366 ID - pug01:4426366 LA - eng TI - Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth PY - 2014 JO - (2014) ECS SOLID STATE LETTERS SN - 2162-8742 PB - 2014 AU - Sueoka, Koji AU - Kamiyama, Eiji AU - Vanhellemont, Jan AU - Nakamura, Kozo ER -Download RIS file
| 00000nam^a2200301^i^4500 | |||
| 001 | 4426366 | ||
| 005 | 20180813143315.0 | ||
| 008 | 140620s2014------------------------eng-- | ||
| 022 | a 2162-8742 | ||
| 024 | a 000336196100002 2 wos | ||
| 024 | a 1854/LU-4426366 2 handle | ||
| 024 | a 10.1149/2.002406ssl 2 doi | ||
| 040 | a UGent | ||
| 245 | a Impact of plane thermal stress near the melt/solid interface on the v/G criterion for defect-free large diameter single crystal Si growth | ||
| 260 | c 2014 | ||
| 598 | a A1 | ||
| 700 | a Sueoka, Koji | ||
| 700 | a Kamiyama, Eiji | ||
| 700 | a Vanhellemont, Jan u WE04 0 801001638448 9 FC2BF318-F0ED-11E1-A9DE-61C894A0A6B4 | ||
| 700 | a Nakamura, Kozo | ||
| 650 | a Physics and Astronomy | ||
| 653 | a VACANCY | ||
| 653 | a SILICON GROWTH | ||
| 773 | t ECS SOLID STATE LETTERS g ECS Solid State Lett. 2014. 3 (6) p.P69-P72 q 3:6<P69 | ||
| 856 | 3 Full Text u https://biblio.ugent.be/publication/4426366/file/4426387 z [ugent] y ECS_Solid_State_Lett.-2014-Sueoka-P69-72.pdf | ||
| 920 | a article | ||
| Z30 | x WE 1 WE04 | ||
| 922 | a UGENT-WE | ||
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